Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-09-16
1999-10-26
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438251, H01L 218242
Patent
active
059727470
ABSTRACT:
A semiconductor memory device includes a semiconductor substrate, a cell array region storing data on the substrate, a periphery circuit region on the substrate, the periphery circuit region controlling input and output of the data stored in the cell, a plurality of word-lines and bit-lines on the cell array region, and a plurality of dummy pattern layers on the periphery circuit region.
REFERENCES:
patent: 5352623 (1994-10-01), Kamiyama
LG Semicon Co. Ltd.
Tsai Jey
LandOfFree
Method of fabricating semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-763407