Method of fabricating semiconductor memory device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438251, H01L 218242

Patent

active

059727470

ABSTRACT:
A semiconductor memory device includes a semiconductor substrate, a cell array region storing data on the substrate, a periphery circuit region on the substrate, the periphery circuit region controlling input and output of the data stored in the cell, a plurality of word-lines and bit-lines on the cell array region, and a plurality of dummy pattern layers on the periphery circuit region.

REFERENCES:
patent: 5352623 (1994-10-01), Kamiyama

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