UV/halogen metals removal process

Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...

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134 2, 134 3, 216 58, 216 66, B08B 312

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059548843

ABSTRACT:
A chlorine based dry-cleaning system appropriate for removing metal contaminants from the surface of substrate is described in which the metal contaminant is chlorinated and reduced to a volatile metal chloride by UV irradiation. The process parameters of chlorine gas partial pressure, temperature, ultraviolet bandwidth, and/or the sequence of exposure of the substrate to the chlorine containing gas and to the ultraviolet radiation are selected so as to effect substantial removal of the metal without excessive substrate roughening.

REFERENCES:
patent: 4498953 (1985-02-01), Cook et al.
patent: 5094701 (1992-03-01), Norman et al.
patent: 5178721 (1993-01-01), Sugino
patent: 5198388 (1993-03-01), Kawai
patent: 5213621 (1993-05-01), Ivankovits et al.
patent: 5213622 (1993-05-01), Bubling et al.
patent: 5221366 (1993-06-01), Roberts et al.
patent: 5221423 (1993-06-01), Sugino et al.
patent: 5332444 (1994-07-01), George et al.
patent: 5356514 (1994-10-01), Kinoshita
patent: 5431774 (1995-07-01), Douglas
patent: 5470799 (1995-11-01), Itoh et al.
patent: 5814156 (1998-09-01), Elliott et al.
Lankard et al, "Laser assisted etching of chromium and copper" Proceedings of the Syposium on Laser Processes for Microelectronic Applications, pp. 113-122, Oct. 21-22 1987.
Meguro et al, "Tunable UV laser induced digital etching of GaAs: wavelength dependence of etch rate and surface processes", Applied Surface Science Elsevier vol. 106, pp. 365-268, Oct. 1996.
Sesselmann W; "Chemical Etching of Silicon Induced by Excimer Laser Radiation", Chemtronics, vol. 4, No. 3, Sep. 1, 1989.
Sugino et al, "Removal of Fe and A1 on a Silicon Surface Using UV-Excited Dry Cleaning", IEICE Transactions on Electronics, vol. E75C, No. 5, pp. 829-833, Jul. 1992.
Yashuisa Sato et al , Reliability-Improvement of the MOS Structures Using Photo-Excited Dry Cleaning before Oxidation, Japanese Journal of Applied Physics, pp. 1103-1106, Jan. 1, 1990.
Sugino R. et al, "Characterization of Si-SiO.sub.2 Interfaces Formed after Pho9to-Excited Cleaning", Japanese Journal of Applied Physics, pp. 417-420, Aug. 28, 1989.
C. Elsmore et al., "Comparison of HCl Gas Phase Cleaning With Conventional and Dilute Wet Chemistries" Electrochemical Society Proceedings, (1995), 142-149.
S. Lawing et al., "UV/Cl.sub.2 Etching and Cleaning of Wafer Surfaces", FSI International Technical Report, (1995), 1-9.
T. Ito, "Wafer Cleaning With Photo-Excited Halogen Radicals", Proceedings--Institute of Environmental Science, (1991), 806-811.
R. Sugino et al., "Through-Oxide Cleaning of Silicon Surface by Photo-Excited Radicals", Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, 1987, 207-210.
R. Sugino et al., "Removal of Fe and A1 on a Silicon Surface Using UV-Excited Dry Cleaning", IECIC Trans. Electron., (Jul. 1992), 829-833.
T. Aoyama et al., "Surface Cleaning for Si Epitaxy Using Photoexcited Fluorine Gas", J. Electrochem. Soc., vol. 140, No. 2, Feb. 1993, 366-371.
R. Sugino et al., "Dry Cleaning of Si and SiO.sub.2 Surfaces using SiCl.sub.4 System", Fourth International Symposium on Semiconductor Manufacturing, Sep. 1995, Austin TX, 262-265.
D. E. Ibbotson et al., "Selective Interhalogen Etching of Tantalum Compounds and Other Semiconductor Materials", Appl. Phys. Lett, 46(8) Apr. 1985 794-796.

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