Continuous process for forming improved titanium nitride barrier

Details Continuous process for forming improved titanium nitride barrier Continuous process for forming improved titanium nitride barrier

1995-06-07

1999-10-26

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, C23C 1434

Patent

active

059721782

ABSTRACT:
A continuous process for the deposition of robust titanium-containing barrier layers comprises sputtering in a single substrate sputtering chamber a first layer of titanium, sputtering a layer of titanium nitride thereover, treating the titanium nitride layer with a plasma containing oxygen while continuing to sputter the titanium target to deposit a thin layer of TiON, and finally sputtering a layer of titanium over the titanium nitride. The latter step removes impurities from the titanium target, preventing poisoning of the target. Thus subsequent substrates can be continuously processed in said chamber without degrading the barrier properties or poisoning the titanium target.

REFERENCES:
patent: 5232871 (1993-08-01), Ho
patent: 5240880 (1993-08-01), Hindman et al.
patent: 5378660 (1995-01-01), Ngan et al.
patent: 5439574 (1995-08-01), Kobayashi et al.
Liao et al, "Ti/TiN Barrier Enhancement for Aluminum Plug Interconnect Technology", VMIC Conference, 1994, ISMIC--103/94/0428 pp. 428-434.
Dixit et al, "REactively sputtered titanium nitride films for submicron contact barrier metallization", Appl. Phys. Lett. 62 (4) 15. Jan. 1993 pp. 357-359.

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