Suppression of boron segregation for shallow source and drain ju

Details Suppression of boron segregation for shallow source and drain ju Suppression of boron segregation for shallow source and drain ju

1997-12-19

1999-09-28

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438199, 438508, 438509, 438526, 438529, 438530, 438763, 438917, H01L 2131, H01L 21469

Patent

active

059603224

ABSTRACT:
A method in the manufacture of ultra-large scale integrated circuit semiconductor devices suppresses boron loss due to segregation into the screen oxide during the boron activation rapid thermal anneal. A nitridation of the screen oxide is used to incorporate nitrogen into the screen oxide layer prior to boron implantation for ultra-shallow, source and drain extension junctions. A second nitridation of a second screen oxide is used prior to boron implantation for deeper, source and drain junctions. This method significantly suppresses boron diffusion and segregation away from the silicon substrate which reduces series resistance of the complete source and drain junctions.

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Wolf, Stanley; Silicon Processing for the VLSI Era, vol. 1; p. 187, 305-8, 1986.
Wolf, Stanley; Silicon Processing for the VLSI Era, vol. 2; p. 212-14, 1990 .

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