Nonvolatile semiconductor memory device and method of fabricatio

Details Nonvolatile semiconductor memory device and method of fabricatio Nonvolatile semiconductor memory device and method of fabricatio

1997-10-08

1999-09-28

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438258, 438289, 438291, H01L 218247

Patent

active

059602830

ABSTRACT:
A nonvolatile semiconductor memory device and a method of fabrication thereof wherein the nonvolatile semiconductor memory device has at least one memory cell transistor of DAS type and an externally-accessible conduction layer electrically connected to the channel region of the transistor.

REFERENCES:
patent: 4161039 (1979-07-01), Rossler
patent: 4317273 (1982-03-01), Guterman et al.
patent: 4757032 (1988-07-01), Contiero
patent: 5034790 (1991-07-01), Mukherjee
patent: 5079603 (1992-01-01), Komori et al.
patent: 5235200 (1993-08-01), Komori et al.
patent: 5278787 (1994-01-01), Iwasa
patent: 5553018 (1996-09-01), Wang et al.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device and method of fabricatio does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device and method of fabricatio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device and method of fabricatio will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-715106