Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1995-07-17
1997-04-29
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438231, 438232, 438564, H01L 2170, H01L 2700
Patent
active
056248636
ABSTRACT:
A semiconductor processing method of forming complementary first conductivity type doped and second conductivity type doped active regions within a semiconductor substrate includes, a) providing a semiconductor substrate; b) masking a desired first conductivity type region of the substrate while conducting second conductivity type doping into a desired second conductivity type active region of the substrate; c) providing an insulating layer over the substrate over the desired first conductivity type region and the second conductivity type doped region; d) patterning the insulating layer to provide a void therethrough to the desired first conductivity type region; e) filling the void with a first conductivity type doped polysilicon plug, the plug having a first conductivity type dopant impurity concentration of at least 1.times.10.sup.20 ions/cm.sup.3, the desired first conductivity type region having a first conductivity type dopant concentration prior to the filling step which is in the range of from 0 ions/cm.sup.3 to 1.times.10.sup.19 ions/cm.sup.3 ; and f) annealing the substrate for a period of time effective to out-diffuse first conductivity type dopant impurity from the first conductivity type doped polysilicon plug into the substrate to form the desired first conductivity type active region having a first conductivity type dopant impurity concentration of at least 1.times.10.sup.20 ions/cm.sup.3 in the substrate. Methods of forming CMOS FET transistors, and SRAM and DRAM CMOS circuitry are also disclosed.
REFERENCES:
patent: 5145799 (1992-09-01), Rodder
patent: 5179033 (1993-01-01), Adan
patent: 5204279 (1993-04-01), Chan et al.
Dennison Charles
Helm Mark
Micro)n Technology, Inc.
Tsai Jey
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