Method of making a mask ROM with a groove

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438586, 438128, H01L 218246

Patent

active

056248628

ABSTRACT:
The mask ROM of the present invention is manufactured in the following processes; forming a cell array in which all the cells will be driven as on-cells, forming a groove by etching some portions of the semiconductor substrate in the drain region of the specific on-cell among the on-cells on customer's request, and then practicing a source and drain ion implantation process.

REFERENCES:
patent: 4997777 (1991-03-01), Boivin
patent: 5149667 (1992-09-01), Choi
patent: 5278089 (1994-01-01), Nakagawara

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