Semiconductor device with a semiconductor layer formed on an ins

Details Semiconductor device with a semiconductor layer formed on an ins Semiconductor device with a semiconductor layer formed on an ins

1997-04-14

2000-02-29

Fourson, George

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438412, 438770, 257349, 257354, H01L 2176

Patent

active

060308737

ABSTRACT:
A semiconductor device which can prevent formation of a parasitic transistor and degradation in its threshold voltage is obtained. In the semiconductor device, a sidewall insulating film the width of which is increased toward its lower portion is formed on a side wall of a semiconductor layer, and a gate electrode layer is formed such that it extends on the semiconductor layer and the sidewall insulating film.

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