Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-04-19
2000-08-01
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 257306, 257311, H01L 27108
Patent
active
060970553
ABSTRACT:
A multiple tubular shaped capacitor electrode of a semiconductor capacitor with an increased surface area and a method for fabricating thereof. The multiple tubular shaped capacitor includes at least two tubular shapes whose side portions are overlapped with each other. The multiple tubular shaped capacitor is made by forming an insulating layer over an etch stop layer including a contact plug, partially etching the insulating layer down to the contact plug and etch stop layer to form an opening composed of at least two upright cylindrical openings with side portions that define an overlap, and forming a conductive layer on a bottom and both side walls of the opening to form a storage node composed of at least two upright tubular shapes which are attached together at a vertical side section which defines an overlap portion of both tubular shapes to form a capacitor storage node.
REFERENCES:
patent: 5274258 (1993-12-01), Ahn
patent: 5561310 (1996-10-01), Woo et al.
patent: 5604146 (1997-02-01), Tseng
patent: 5789290 (1998-08-01), Sun
patent: 5792693 (1998-08-01), Tseng
patent: 5889301 (1999-03-01), Tseng
patent: 5959322 (1999-09-01), Lee
Lee Se-Hyeong
Seo Jun
Hu Shouxiang
Samsung Electronics Co,. Ltd.
Thomas Tom
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