Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1999-06-04

2000-08-01

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438304, 438595, 438576, 438582, 438627, 438656, H01L 2146

Patent

active

060966416

ABSTRACT:
A tungsten nitride (6b) is provided also on side surface of a tungsten (6c), to increase an area where the tungsten (6c) and the tungsten nitride (6b) are in contact with each other. On a gate insulating film (2), a polysilicon side wall (5) having high adhesive strength to the gate insulating film is disposed. The polysilicon side wall (5) is brought into a close contact with the tungsten nitride (6b) on the side surface of the tungsten (6c). With this structure improved is adhesive strength of a metal wire or a metal electrode which is formed on an insulating film of a semiconductor device.

REFERENCES:
patent: 5082794 (1992-01-01), Pfiester et al.
patent: 5358885 (1994-10-01), Oku et al.
patent: 5538913 (1996-07-01), Hong
patent: 5600168 (1997-02-01), Lee
patent: 5668021 (1997-09-01), Subramanian et al.
patent: 5960270 (1999-09-01), Misra et al.
J. C. Hu, et al., "Feasibility of Using W/TiN As Metal Gate For Conventional 0.13.mu.m CMOS Technology and Beyond", International Electron Devices Meeting Technical Digest, IEEE, Dec. 7-10, 1997, pp. 97-825--97-828.
A. Chatterjee, et al., "Sub-100nm Gate Length Metal Gate NMOS Transistors Fabricated By a Replacement Gate Process", International Electron Devices Meeting Technical Digest, IEEE, Dec. 7-10, 1997, pp. 97-821--97-824

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-663431