Method of making a transistor and capacitor structure with a con

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438639, H01L 218242

Patent

active

060966017

ABSTRACT:
A semiconductor device employable as a capacitor has a conductive pillar arranged in an opening produced in an insulator layer produced on a semiconductor substrate, the conductive pillar being connected with a conductive region of the semiconductor substrate and being surrounded by a dielectric cylinder which is further surrounded by a conductive cylinder which extends onto the surface of the semiconductor substrate, whereby allowing a large amount of capacity, regardless of the horizontal area of the semiconductor device. A semiconductor memory cell of the one transistor and one capacitor structure has a capacitor which has a conductive pillar arranged in an opening produced in an insulator layer produced on a semiconductor substrate, the conductive pillar being connected with a conductive region of the semiconductor substrate and being surrounded by a dielectric cylinder which is further surrounded by a conductive cylinder which extends onto the surface of the semiconductor substrate, whereby a large magnitude of integration is readily realized.

REFERENCES:
patent: 5126280 (1992-06-01), Chan et al.
patent: 5150279 (1992-09-01), Gonzalez et al.
patent: 5292677 (1994-03-01), Dennison
patent: 5453396 (1995-09-01), Gonzalez et al.
patent: 5668036 (1997-09-01), Sune
patent: 5726083 (1998-03-01), Takaishi
patent: 5874359 (1999-02-01), Liaw et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of making a transistor and capacitor structure with a con does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a transistor and capacitor structure with a con, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a transistor and capacitor structure with a con will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-663104

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.