Method of measuring resist pattern

Radiant energy – Inspection of solids or liquids by charged particles – Methods

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2504911, G01N 23227, H01L 2100

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active

046706500

ABSTRACT:
A method of measuring a resist pattern in which size and/or position of a latent image formed in the resist film by irradiation, is measured by Auger electron spectroscopy or a like method. With this method, since there is no need to develop when the resist pattern is not acceptable, manufacturing costs are decreased. By adjusting developing time by replying upon the data from the latent image, furthermore, high yield processing can be effected more precisely.

REFERENCES:
patent: 3703637 (1972-11-01), Dugan
patent: 4495262 (1985-01-01), Matsuzaki et al.
Pocker et al., High Spatial Resolution Auger Spectroscopy and Auger Integration Applications, J. Vac. Sci. Technol., vol. 12, No. 1, Jan./Feb. 1975.
Todd et al., Auger Electron Spectroscopy at High Spatial Resolution and nA Primary Beam Currents, J. Vac. Sci. Technol., vol. 12, No. 4, Jul./Aug. 1975.
Kaplan et al, "Repair of Mask-Caused Defects in a Positive Working Photoresist Pattern", IBM Tech. Dis. Bul., vol. 8, No. 6, Nov. 65.

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