Memory substitution system and method for correcting partially d

Details Memory substitution system and method for correcting partially d Memory substitution system and method for correcting partially d

1995-11-03

1997-07-01

Dinh, Son T.

Static information storage and retrieval

Read/write circuit

Bad bit

36518907, 365201, G11C 700

Patent

active

056445415

ABSTRACT:
A memory system comprises a plurality of semiconductor memories with some bad bits, a substitution memory and a mapping logic to redirect external memory accesses to bad-bit locations in the semiconductor memories to good storage cells within the substitution memory.

REFERENCES:
patent: 4376300 (1983-03-01), Tang
patent: 5195057 (1993-03-01), Kasa et al.
patent: 5381370 (1995-01-01), Lacey et al.
patent: 5402376 (1995-03-01), Horiguchi et al.
patent: 5416740 (1995-05-01), Fujita et al.

Affiliated with

Also associated with

Rating

Memory substitution system and method for correcting partially d does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory substitution system and method for correcting partially d, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory substitution system and method for correcting partially d will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-603096