Method for forming pattern

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430312, G03F 720

Patent

active

061070068

ABSTRACT:
Disclosed is a method for forming a pattern by which the T-top formation problem of chemically amplified resists is eliminated. Preferably, an i-line resist is employed as a barrier layer to protect the underlying chemically amplified resist from base attack. The i-line resist used herein can be exposed and developed by a normal deep-UV lithography process without substantially affecting the performance of chemically amplified resists.

REFERENCES:
patent: 5091289 (1992-02-01), Cronin
patent: 5120622 (1992-06-01), Hanrahan
patent: 5139918 (1992-08-01), Goel
patent: 5310622 (1994-05-01), Sardella
patent: 5905018 (1999-05-01), Bhatt

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