Integrated semiconductor memory circuit and method for its opera

Static information storage and retrieval – Read/write circuit – Precharge

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365210, 365206, 36518909, 365149, G11C 1140

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055746942

ABSTRACT:
In an integrated semiconductor memory circuit and a method for its operation, the circuit includes devices by means of which second electrodes of memory capacitors of dummy memory cells are acted upon by a precharging potential. The precharging potential has a value being 5 to 35% greater than a value of half a difference between a supply voltage potential and a reference potential.

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IBM Technical Disclosure Bulletin vol. 34, No. 8, Jan. 1992, pp. 147-149, "Dummy Cell for Open-. . . ".

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