Integrated circuit with multiple gate dielectric structures

Details Integrated circuit with multiple gate dielectric structures Integrated circuit with multiple gate dielectric structures

1998-11-24

2000-07-11

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438231, H01L 21336, H01L 218238

Patent

active

060872365

ABSTRACT:
An integrated circuit includes insulated gate field effect transistors (IGFETs), having gate dielectric layers wherein a nitrogen concentration in the gate dielectric varies between a first concentration at the gate electrode/gate dielectric interface and a second concentration at the gate dielectric/substrate interface. In one embodiment the gate dielectric is an oxynitride formed by an N.sub.2 plasma; and the oxynitride has top surface nitrogen concentration that is higher than a bottom surface nitrogen concentration. In a further aspect of the present invention, an integrated circuit includes a plurality of IGFETs, wherein various ones of the plurality of IGFETs have different gate dielectric thicknesses and compositions. A method of forming IGFETs with different gate dielectric thicknesses and compositions, on a single integrated circuit, includes forming a first oxynitride layer, forming a masking layer, removing a portion of the first oxynitride layer, forming an oxide layer where the oxynitride was removed, and forming a plurality of gate electrodes, a first portion of the gate electrodes overlying the first oxynitride layer.

REFERENCES:
patent: 4621277 (1986-11-01), Ito et al.
patent: 4683554 (1987-07-01), Lockwood et al.
patent: 4980307 (1990-12-01), Ito et al.
patent: 5258323 (1993-11-01), Sarma et al.
patent: 5344524 (1994-09-01), Sharma et al.
patent: 5422296 (1995-06-01), Lage
patent: 5516707 (1996-05-01), Loh et al.
patent: 5659192 (1997-08-01), Sarma et al.
patent: 5877050 (1999-03-01), Gardner et al.
patent: 5900654 (1999-05-01), Spratt
patent: 5960289 (1999-09-01), Tsui et al.

Affiliated with

Also associated with

Rating

Integrated circuit with multiple gate dielectric structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit with multiple gate dielectric structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit with multiple gate dielectric structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-541798