Method of fabricating flash memory with dissymmetrical floating

Details Method of fabricating flash memory with dissymmetrical floating Method of fabricating flash memory with dissymmetrical floating

1998-04-22

2000-07-11

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438263, 438981, H01L 218247

Patent

active

060872233

ABSTRACT:
A semiconductor flash memory device comprises a subrate, a plurality of buried bit lines, an insulation film, a floating gate, an inter-layer insulation film, and a control gate formed on the inter-layer insulation film. The fabrication method comprises forming the patterned first insulation films on the substrate, forming the gate insulation film on the substrate and between the patterned first insulation films, depositing a first poly-silicon layer on the gate insulation film and the patterned first insulation film, forming a floating gate by etching the first poly-silicon layer, forming a second insulation film on each of the floating gate and the substrate having the buried bit lines therein, and forming a control gate on the second insulation film. The flash memory device realizes high yield rate due to the simplified fabrication steps and facilitated fabrication.

REFERENCES:
patent: 4671849 (1987-06-01), Chen et al.
patent: 4698128 (1987-10-01), Berglund et al.
patent: 4814041 (1989-03-01), Auda
patent: 4902377 (1990-02-01), Berglund et al.
patent: 5146291 (1992-09-01), Watabe et al.
patent: 5303185 (1994-04-01), Hazani et al.
patent: 5323039 (1994-06-01), Asano et al.
patent: 5326999 (1994-07-01), Kim et al.
patent: 5395779 (1995-03-01), Hong
patent: 5502321 (1996-03-01), Matsushita
patent: 5592000 (1997-01-01), Onishi et al.

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