Nonvolatile memory

Details Nonvolatile memory Nonvolatile memory

1998-11-25

2000-02-22

Nelms, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438257, 438266, 438267, 36518508, H01L 21336

Patent

active

060279745

ABSTRACT:
A nonvolatile memory cell which is highly scalable includes a cell formed in a triple well. A select transistor can have a source which also acts as the emitter of a lateral bipolar transistor. The lateral bipolar transistor operates as a charge injector. The charge injector provides electrons for substrate hot electron injection of electrons onto the floating gate for programming. The cell depletion/inversion region may be extended by forming a capacitor as an extension of the control gate over the substrate between the source and channel of said sense transistor.

REFERENCES:
patent: 5449634 (1995-09-01), Inoue
patent: 5472891 (1995-12-01), Komori et al.
patent: 5712178 (1998-01-01), Cho et al.
patent: 5880499 (1999-03-01), Oyama

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