Semiconductor device and process for production thereof

Details Semiconductor device and process for production thereof Semiconductor device and process for production thereof

1998-08-21

1999-12-21

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257763, 257764, 257758, 257753, 257750, H01L 2348, H01L 2352, H01L 2940

Patent

active

060052910

ABSTRACT:
A semiconductor device comprising an insulating film at least partially containing a fluorine-containing film, formed above a semiconductor substrate, and a titanium nitride film formed on the insulating film. The above titanium film functions as a barrier metal film for barriering the diffusion of fluorine (F) atoms.

REFERENCES:
patent: 5523626 (1996-06-01), Hayashi et al.
patent: 5866484 (1999-02-01), Muto
patent: 5874779 (1999-02-01), Matsuno
Hayasaka, et al., Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials, "Fluorine Doped SiO2 for Low Dielectric Constant Films in Sub-Half Micron ULSI Multilevel Interconnection", 1995, pp. 157-159.

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