Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

1997-03-05

1999-08-24

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, 438241, 438396, H01L 218242

Patent

active

059435682

ABSTRACT:
A method of making a semiconductor device include forming: (a) a semiconductor substrate on whose surface an integrated circuit is formed, (b) a first insulating layer on the semiconductor device and having first contact holes which lead to the integrated circuit, (c) a capacitance element on the first insulating layer, (d) a second insulating layer on the first insulating layer to cover the capacitance element, and having second contact holes which lead to an upper and a lower electrodes of the capacitance element respectively, and (e) interconnections which are connected to the integrated circuit and the capacitance element respectively through the first and second contact holes. The hydrogen density of this semiconductor device is 10.sup.11 atoms/cm.sup.2 or less.

REFERENCES:
patent: 5316982 (1994-05-01), Taniguchi

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