Method of eliminating buried contact trench in MOSFET devices wi

Details Method of eliminating buried contact trench in MOSFET devices wi Method of eliminating buried contact trench in MOSFET devices wi

1999-06-01

2000-10-17

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438286, 438526, 438533, 438305, H01L 21425, H01L 21336

Patent

active

06133104&

ABSTRACT:
The method of forming buried contacts on a semiconductor substrate is as follows. At first, a gate insulator layer is formed on the substrate. An undoped silicon layer is then formed on the substrate, and a dielectric layer is formed on the undoped silicon layer. Portions of the dielectric layer, of the undoped silicon layer, and of the gate insulator layer are removed to define a buried contact opening. A doping step is carried out to dope the substrate for forming a buried contact region. A doped silicon layer is formed over the substrate. Next, a portion of the doped silicon layer is then removed to leave a silicon connection and a doped silicon sidewall. The dielectric layer is removed and a thermal oxidization is performed to form a thermal oxide layer on the exposed silicon surfaces. A gate region is defined by removing portions of the thermal oxide layer and the undoped silicon layer. The substrate is doped for forming a lightly doped source/drain region. Dielectric sidewalls are then formed on sidewalls of the gate region and of the doped silicon sidewall. Finally, the substrate is doped to form a source/drain region in the substrate under an exposed region of the substrate.

REFERENCES:
patent: 5232863 (1993-08-01), Roberts
patent: 5596215 (1997-01-01), Huang
patent: 5904531 (1999-05-01), Liaw
patent: 5998269 (1999-12-01), Huang et al.

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