Method of making a DRAM element and a logic element

Details Method of making a DRAM element and a logic element Method of making a DRAM element and a logic element

1998-06-18

2000-10-17

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438452, H01L 218242

Patent

active

061330876

ABSTRACT:
A semiconductor device having two or more types of separation oxide film are formed on the substrate of the semiconductor device by different methods so as to correspond with element types formed on the same semiconductor substrate. The method for producing the semiconductor device comprises a first separation oxide film formation process, and a second separation oxide film formation process. In the first separation oxide film formation process, a first mask layer is formed on the semiconductor substrate, the first mask layer of the element separation region of the logic element is selectively removed and the semiconductor substrate in the region area selectively oxidized. In second separation oxide film formation process, the remaining first mask layer is removed, a second mask layer is formed, the second mask layer of the element separation region of DRAM elements is then selectively removed, and the semiconductor substrate of the region is selectively oxidized.

REFERENCES:
patent: 4352236 (1982-10-01), McCollum
patent: 5061654 (1991-10-01), Shimizu et al.
patent: 5350941 (1994-09-01), Madan
patent: 5612241 (1997-03-01), Arima
Japanese Office Action dated Nov. 30, 1999, with partial translation.

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