Method for patterning photoresist film having a stepwise thermal

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430166, 430192, 430313, 430330, 437228, 216 38, 216 51, G03F 736

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056099940

ABSTRACT:
A method for patterning a photoresist film, capable of preventing a notching phenomenon occurring upon forming a pattern of the photoresist film having a single layer structure and thereby accurately forming a pattern of a metal wiring or a gate with a desired dimension even on a layer exhibiting a severe topology by removing a portion of the photoresist film coated over the layer having a severe topology up to a depth corresponding to 30% or below of the thickness of the photoresist film to form a recess, forming an planarized inorganic material layer on the recess, and selectively removing a predetermined portion of the photoresist film under a condition that the inorganic material layer is used as a mask.

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patent: 5348842 (1994-09-01), Khanna et al.
patent: 5366851 (1994-11-01), Novembre
patent: 5470693 (1995-11-01), Sachdev et al.

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