Non-volatile memory devices having a multi-layered charge...

Details Non-volatile memory devices having a multi-layered charge... Non-volatile memory devices having a multi-layered charge...

2009-04-13

2011-12-13

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S326000, C257SE21685, C257SE21686, C257SE21687, C257SE21688

Reexamination Certificate

active

08076713

ABSTRACT:
A non-volatile memory device includes a substrate having a first region and a second region. A first gate electrode is disposed on the first region. A multi-layered charge storage layer is interposed between the first gate electrode and the substrate, the multi-layered charge storage including a tunnel insulation, a trap insulation, and a blocking insulation layer which are sequentially stacked. A second gate electrode is placed on the substrate of the second region, the second gate electrode including a lower gate and an upper gate connected to a region of an upper surface of the lower gate. A gate insulation layer is interposed between the second gate electrode and the substrate. The first gate electrode and the upper gate of the second gate electrode comprise a same material.

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