Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Reexamination Certificate
2010-07-05
2011-12-13
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
C257S724000, C257SE23052, C257SE23178
Reexamination Certificate
active
08076757
ABSTRACT:
A semiconductor device has an IPD structure formed over a substrate. First and second electrical devices are mounted to a first surface of the IPD structure. An encapsulant is deposited over the first and second electrical devices and IPD structure. A shielding layer is formed over the encapsulant and electrically connected to a conductive channel in the IPD structure. The conductive channel is connected to ground potential to isolate the first and second electrical devices from external interference. A recess can be formed in the encapsulant material between the first and second electrical devices. The shielding layer extends into the recess. An interconnect structure is formed on a second surface of the IPD structure. The interconnect structure is electrically connected to the first and second electrical devices and IPD structure. A shielding cage can be formed over the first electrical device prior to depositing encapsulant.
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Do Byung Tai
Huang Rui
Lin Yaojian
Pagaila Reza A.
Atkins Robert D.
Patent Law Group
Smoot Stephen W
STATS ChipPAC Ltd.
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