Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2010-07-06
2011-11-08
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S414000, C257S431000, C257S440000, C257S447000, C257S448000
Reexamination Certificate
active
08053856
ABSTRACT:
The present disclosure provides methods and apparatus for reducing dark current in a backside illuminated semiconductor device. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside surface and a backside surface, and forming a plurality of sensor elements in the substrate, each of the plurality of sensor elements configured to receive light directed towards the backside surface. The method further includes forming a dielectric layer on the backside surface of the substrate, wherein the dielectric layer has a compressive stress to induce a tensile stress in the substrate. A backside illuminated semiconductor device fabricated by such a method is also disclosed.
REFERENCES:
patent: 6169319 (2001-01-01), Malinovich et al.
Hernan A. Rueda, “Modeling of Mechanical Stress in Silicon Isolation Technology and Its Influence on Device Characteristics”, A Dissertation Presented to the Graduate School of the University of Florida in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy, University of Florida, 1999, 150 pages.
Lin Ren-Jie
Tsai Chia-Shiung
Tu Yeur-Luen
Wang Ching-Chun
Wuu Shou-Gwo
Haynes and Boone LLP
Lee Kyoung
Richards N Drew
Taiwan Semiconductor Manufacturing Company , Ltd.
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