Method for manufacturing SONOS flash memory

Details Method for manufacturing SONOS flash memory Method for manufacturing SONOS flash memory

2008-08-18

2011-12-13

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S264000, C257SE21423

Reexamination Certificate

active

08076206

ABSTRACT:
A method for manufacturing a semiconductor device which includes steps of forming a dummy layer on a semiconductor substrate, forming a groove 12 in the semiconductor substrate while using the dummy layer as a mask, forming a tunnel insulating film and a trap layer to cover an inner surface of the groove and the dummy layer, eliminating the trap layer formed above the upper surface and at the sides of the dummy layer, and forming a top insulating film to cover a remaining trap layer and the exposed tunnel insulating film.

REFERENCES:
patent: 7732276 (2010-06-01), Fang et al.
patent: 2007/0045720 (2007-03-01), Kouketsu et al.
patent: 2008/0230830 (2008-09-01), Kim et al.

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