Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-12-10
2011-10-04
Doan, Theresa T (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C438S613000, C257S737000, C257S779000
Reexamination Certificate
active
08030201
ABSTRACT:
A first electronic circuit component and a second electronic circuit component are electrically connected to an electro-conductive member via a first solder and a second solder, respectively. The electro-conductive member is formed in a resin film. The electro-conductive member is configured as containing a second diffusion barrier metal film. The second diffusion barrier metal film prevents diffusion of the second solder. Between the electro-conductive member and the first solder, a first diffusion barrier metal film is provided. The first diffusion barrier metal film prevents diffusion of the first solder. On the first surface of the resin film and on the electro-conductive member, an adhesive metal film is formed so as to contact with the resin film and the electro-conductive member. The adhesive metal film has stronger adhesiveness to the resin film than either of those of the first solder and the first diffusion barrier metal film.
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Japanese Official Action—2006-121575—Jul. 19, 2011.
Kawano Masaya
Kikuchi Katsumi
Kurita Yoichiro
Soejima Koji
Yamamichi Shintaro
Doan Theresa T
NEC Corporation
Renesas Electronics Corporation
Young & Thompson
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