Cell structure of semiconductor device having an active...

Details Cell structure of semiconductor device having an active... Cell structure of semiconductor device having an active...

2009-06-23

2011-10-04

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S300000, C257S301000, C257S302000, C257S303000, C257S304000, C257S305000, C257S307000, C257S308000, C257S309000, C257S390000, C257S905000, C257S906000, C257S907000, C257S908000, C257SE21646, C257SE27084

Reexamination Certificate

active

08030697

ABSTRACT:
A cell structure of a semiconductor device includes an active region, having a concave portion, and an inactive region that defines the active region. A gate pattern in the active region is arranged perpendicular to the active region. A landing pad on the active region and the inactive region contacts the active region. A bit line pattern on the inactive region intersects the gate pattern perpendicularly, the bit line pattern being electrically connected to the landing pad and having a first protrusion corresponding to the concave portion of the active region.

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