Compound semiconductor structure

Details Compound semiconductor structure Compound semiconductor structure

2008-10-09

2011-10-04

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S076000, C257S194000, C257SE29246, C257SE21403

Reexamination Certificate

active

08030164

ABSTRACT:
A method for manufacturing a compound semiconductor structure, includes (a) selecting a conductive SiC substrate in accordance with color and resistivity and (b) epitaxially growing a GaN series compound semiconductor layer on the selected conductive SiC substrate. The step (a) preferably selects a conductive SiC substrate whose main color is green, whose conductivity type is n-type and whose resistivity is 0.08 Ωcm to 1×105Ωcm, or whose main color is black, whose conductivity type is p-type and whose resistivity is 1×103Ωcm to 1×105Ωcm, or whose main color is blue, whose conductivity type is p-type and whose resistivity is 10 Ωcm to 1×105Ωcm. The step (b) preferably includes (b-1) growing an AlInGaN layer having a thickness not thinner than 10 μm on the conductive SiC substrate by hydride VPE.

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