Multiple-gate transistors with reverse T-shaped fins

Details Multiple-gate transistors with reverse T-shaped fins Multiple-gate transistors with reverse T-shaped fins

2008-12-29

2011-11-15

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257SE29052, C257SE29104

Reexamination Certificate

active

08058692

ABSTRACT:
A method of forming an integrated circuit structure includes forming a first insulation region and a second insulation region in a semiconductor substrate and facing each other; and forming an epitaxial semiconductor region having a reversed T-shape. The epitaxial semiconductor region includes a horizontal plate including a bottom portion between and adjoining the first insulation region and the second insulation region, and a fin over and adjoining the horizontal plate. The bottom of the horizontal plate contacts the semiconductor substrate. The method further includes forming a gate dielectric on a top surface and at least top portions of sidewalls of the fin; and forming a gate electrode over the gate dielectric.

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