SOI body contact using E-DRAM technology

Details SOI body contact using E-DRAM technology SOI body contact using E-DRAM technology

2011-03-30

2011-11-08

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S479000, C257SE21561, C257SE21642

Reexamination Certificate

active

08053303

ABSTRACT:
A semiconductor structure is disclosed. The semiconductor structure includes an active semiconductor layer, a semiconductor device having a gate disposed on top of the active semiconductor layer, and source and drain regions and a body/channel region disposed within the active semiconductor layer, an insulator layer having a first and second side, the first side being adjacent to the active semiconductor layer, a substrate disposed adjacent to the second side of the insulator layer, a body contact disposed under the body/channel region and in the insulator layer. The body contact electrically connects with and contacts with the body/channel region of the semiconductor device and the substrate, to thereby form an ohmic contact and to eliminate floating body effects.

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