Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-11-30
2011-11-15
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S239000, C257S314000, C257S261000, C365S185010
Reexamination Certificate
active
08058118
ABSTRACT:
Methods of forming and operating a back-side trap non-volatile memory cell. Method of forming a back-side trap non-volatile memory cell include forming a trapping material, forming two or more sub-layers of dielectric material on the trapping material, wherein a conduction band offset of each sub-layer of dielectric material is less than the conduction band offset of the material upon which it is formed, and forming a channel region on the two or more sub-layers of dielectric material. Methods of operating a back-side trap non-volatile memory cell include programming the memory cell via direct tunneling of carriers through an asymmetric band-gap tunnel insulator layer having two or more sub-layers formed beneath a channel region and having layers of material of increasing conduction band offset, and trapping the carriers in a trapping layer formed under the tunnel insulator layer.
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Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Smith Bradley K
Valentine Jami M
LandOfFree
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