Method of forming aluminum oxide layer and method of...

Details Method of forming aluminum oxide layer and method of... Method of forming aluminum oxide layer and method of...

2008-05-22

2011-10-25

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S250000, C257SE21476, C257SE21294, C257S316000

Reexamination Certificate

active

08043952

ABSTRACT:
Provided is a method of forming an aluminum oxide layer and a method of manufacturing a charge trap memory device using the same. The method of forming an aluminum oxide layer may include forming an amorphous aluminum oxide layer on an underlying layer, forming a crystalline auxiliary layer on the amorphous aluminum oxide layer, and crystallizing the amorphous aluminum oxide layer. Forming the crystalline auxiliary layer may include forming an amorphous auxiliary layer on the amorphous aluminum oxide layer; and crystallizing the amorphous auxiliary layer.

REFERENCES:
patent: 6355519 (2002-03-01), Lee
patent: 2004/0051134 (2004-03-01), Jang et al.
patent: 2008/0001249 (2008-01-01), Sheen et al.
patent: 2008/0079064 (2008-04-01), Lai et al.

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