Silicon carbide semiconductor device and manufacturing...

Details Silicon carbide semiconductor device and manufacturing... Silicon carbide semiconductor device and manufacturing...

2010-01-29

2011-10-04

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C257S328000, C257S329000

Reexamination Certificate

active

08030162

ABSTRACT:
A silicon carbide semiconductor device is fabricated by forming an amorphous layer in a semiconductor layer of a silicon carbide substrate at a boundary between a cell forming area and an outer peripheral area, forming an outer peripheral insulating film over the semiconductor layer in the outer peripheral area, and thermally oxidizing an upper surface of the semiconductor layer in the cell forming area and at least a portion of the amorphous layer exposed by the outer peripheral insulating film to form a gate oxide film including a stepped portion of increased thickness adjacent the outer peripheral insulating film. The gate electrode layer is then formed which extends from the gate oxide film to above the outer peripheral insulating film.

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patent: 6096607 (2000-08-01), Ueno
patent: 6291856 (2001-09-01), Miyasaka et al.
patent: 2004/0113200 (2004-06-01), Kobayashi et al.
patent: 2000195968 (2000-07-01), None
patent: 2000223562 (2000-08-01), None
patent: 2006228901 (2006-08-01), None

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