Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2006-12-20
2011-11-29
Louie, Wai Sing (Department: 2814)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S503000, C438S507000, C438S603000, C438S680000, C257SE21090
Reexamination Certificate
active
08067297
ABSTRACT:
Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, trisilane is employed to deposit SiGe-containing films that are useful in the semiconductor industry in various applications such as transistor gate electrodes.
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ASM America Inc.
Knobbe Martens Olson & Bear LLP
Louie Wai Sing
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