Semiconductor memory device

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S189060, C365S189140, C365S063000

Reexamination Certificate

active

08045362

ABSTRACT:
A semiconductor memory device comprising: a memory cell array in which memory cells each containing a variable resistive element and a rectifier element connected in series are arranged at intersections of a plurality of first wirings and a plurality of second wirings; and a control circuit for selectively driving said first wirings and said second wirings; wherein said control circuit applies a first voltage to said selected first wiring, and changes said first voltage based on the position of said selected memory cell within said memory cell array to apply a second voltage to said selected second wiring, so that a predetermined potential difference is applied to a selected memory cell arranged at the intersection between said selected first wiring and said selected second wiring.

REFERENCES:
patent: 7778062 (2010-08-01), Toda et al.
patent: 2003/0067013 (2003-04-01), Ichihara et al.
patent: 2008/0291716 (2008-11-01), Futatsuyama et al.
patent: 2009/0207647 (2009-08-01), Maejima et al.
patent: 2010/0214820 (2010-08-01), Hosono et al.

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