Semiconductor device having an SOI structure, manufacturing...

Details Semiconductor device having an SOI structure, manufacturing... Semiconductor device having an SOI structure, manufacturing...

2005-10-18

2011-11-29

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S347000, C257S348000, C257SE29278

Reexamination Certificate

active

08067804

ABSTRACT:
The present invention provides a semiconductor device capable of suppressing a body floating effect, and a manufacturing method thereof. A semiconductor device having an SOI structure includes a silicon substrate, a buried insulating layer formed on the silicon substrate, and a semiconductor layer formed on the buried insulating layer. The semiconductor layer has a body region of a first conduction type, a source region of a second conduction type and a drain region of the second conduction type, and a gate electrode is formed on the body region between the source region and the drain region via a gate oxide film. The source region includes an extension layer of the second conduction type, and a silicide layer which makes contact with the extension layer at its side face, and a crystal defect region is formed on a region of a depletion layer generated in a boundary portion between the silicide layer and the body region.

REFERENCES:
patent: 6441434 (2002-08-01), Long et al.
patent: 6455894 (2002-09-01), Matsumoto et al.
patent: 6596554 (2003-07-01), Unnikrishnan
patent: 6608354 (2003-08-01), Hokazono et al.
patent: 6987050 (2006-01-01), Cabral et al.
patent: 7256463 (2007-08-01), Matsumoto et al.
patent: 2003-197634 (2003-07-01), None
patent: 2003-332579 (2003-11-01), None
Scholvin et al., “The Impact of Substrate Surface Potential on the Performance of RF Power LDMOSFETs on High-Resistivity SOI”, IEEE 2003, (IEDM03, Tech. Digest).

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