High density resistance based semiconductor device

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S175000, C438S104000

Reexamination Certificate

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08072793

ABSTRACT:
Memory devices are described along with methods for manufacturing. A memory device as described herein includes a plurality of memory cells located between word lines and bit lines. Each memory cell comprises a diode and a plurality of memory elements each comprising one or more metal-oxygen compounds, the diode and the plurality of memory elements arranged in electrical series along a current path between a corresponding word line and a corresponding bit line.

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