Semiconductor memory device with three-dimensional array and...

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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C365S225700

Reexamination Certificate

active

08031544

ABSTRACT:
A nonvolatile memory device includes a three-dimensional (3D) cell array, a column selection circuit and a fuse block. The 3D cell array includes multiple cell arrays located in corresponding stacked substrate layers, the cell arrays sharing a bit line. The column selection circuit selects a memory unit included in the 3D cell array. The fuse block controls the column selection circuit to repair defective columns with one of multiple redundant bit lines located in the 3D cell array.

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