Pattern forming method

Details Pattern forming method Pattern forming method

2008-12-09

2010-11-30

Chu, John S (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S270100, C430S330000, C430S905000, C430S910000

Reexamination Certificate

active

07842452

ABSTRACT:
A pattern forming method which uses a positive resist composition comprises: (A) a silicon-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a silicon-containing resin having at least one group selected from the group of consisting (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer, and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer, and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating, (ii) a step of exposing the resist coating to light via an immersion liquid, (iii) a step of removing the immersion liquid remaining on the resist coating, (iv) a step of heating the resist coating, and (v) a step of developing the resist coating.

REFERENCES:
patent: 6916543 (2005-07-01), De et al.
patent: 2005/0014090 (2005-01-01), Hirayama et al.
patent: 2005/0046934 (2005-03-01), Ho et al.
patent: 2005/0255414 (2005-11-01), Inabe et al.
patent: 2006/0246373 (2006-11-01), Wang
patent: 1 596 251 (2005-11-01), None
patent: 57-153433 (1982-09-01), None
patent: 7-220990 (1995-08-01), None
patent: 2004/068242 (2004-08-01), None
patent: 2004/077158 (2004-09-01), None
B. J. Lin, “Semiconductor Foundry, Lithography, and Partner”, Plenary Paper, Micropatterning Division TSMC, Inc., Emerging Lithographic Technologies VI, Roxann L. Engelstad, 2002, p. 11-24, Editor processings of SPIE, vol. 4688, 2002 SPIE.0277-786X/02.
J. A. Hoffnagle, “Liquie immersion deep-ultravoilet interferometric lithography”, J. Vas. Sc. Technol., American Vaccuum Society, Dec. 1999, pp. 3306-3309, B 17(6), 0734-211X/99/17(6)/3306.

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