Capacitor for a semiconductor device and manufacturing...

Details Capacitor for a semiconductor device and manufacturing... Capacitor for a semiconductor device and manufacturing...

2009-01-22

2010-06-22

Menz, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000, C257S296000

Reexamination Certificate

active

07741671

ABSTRACT:
Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof.

REFERENCES:
patent: 5390072 (1995-02-01), Anderson et al.
patent: 5985730 (1999-11-01), Lim
patent: 5989635 (1999-11-01), Kawahara et al.
patent: 6008086 (1999-12-01), Schuegraf et al.
patent: 6338995 (2002-01-01), Hwung et al.
patent: 6395650 (2002-05-01), Callegari et al.
patent: 6750126 (2004-06-01), Visokay et al.
patent: 6936508 (2005-08-01), Visokay et al.
patent: 7015534 (2006-03-01), Colombo
patent: 7081409 (2006-07-01), Kang et al.
patent: 7091119 (2006-08-01), Colombo
patent: 7115530 (2006-10-01), Quevedo-Lopez et al.
patent: 7148546 (2006-12-01), Visokay et al.
patent: 7226830 (2007-06-01), Colombo et al.
patent: 7259106 (2007-08-01), Jain
patent: 7279392 (2007-10-01), Lee et al.
patent: 7351632 (2008-04-01), Visokay et al.
patent: 7407850 (2008-08-01), Venugopal et al.
patent: 7410910 (2008-08-01), Ahn et al.
patent: 7425493 (2008-09-01), Yoon et al.
patent: 7432139 (2008-10-01), Currie
patent: 7482242 (2009-01-01), Park et al.
patent: 7498628 (2009-03-01), Oh et al.
patent: 7518199 (2009-04-01), Shimizu et al.
patent: 2002/0090777 (2002-07-01), Forbes et al.
patent: 2005/0059198 (2005-03-01), Visokay et al.
patent: 2005/0070062 (2005-03-01), Visokay et al.
patent: 2005/0079696 (2005-04-01), Colombo
patent: 2005/0106797 (2005-05-01), Colombo
patent: 2005/0124109 (2005-06-01), Quevedo-Lopez et al.
patent: 2005/0170566 (2005-08-01), Lee et al.
patent: 2005/0170601 (2005-08-01), Yoon et al.
patent: 2006/0121744 (2006-06-01), Quevedo-Lopez et al.
patent: 2006/0138514 (2006-06-01), Oh et al.
patent: 2006/0157754 (2006-07-01), Jeon et al.
patent: 2006/0163676 (2006-07-01), Shimizu et al.
patent: 2006/0166476 (2006-07-01), Lee et al.
patent: 2006/0223248 (2006-10-01), Venugopal et al.
patent: 2006/0240679 (2006-10-01), Lee et al.
patent: 2007/0004224 (2007-01-01), Currie
patent: 2008/0057224 (2008-03-01), Cho et al.
patent: 2008/0292783 (2008-11-01), Cho et al.
patent: 2009/0117750 (2009-05-01), OuYang et al.
patent: 2009/0122461 (2009-05-01), Oh et al.
patent: 2009/0291568 (2009-11-01), Lim et al.
patent: 2006179860 (2006-07-01), None
patent: 1020030056898 (2003-07-01), None
patent: 1020030083441 (2003-10-01), None
patent: 1020030083442 (2003-10-01), None
patent: 1020040020241 (2004-03-01), None
patent: 1020040020243 (2004-03-01), None
patent: 1020040093976 (2004-11-01), None

Affiliated with

Also associated with

Rating

Capacitor for a semiconductor device and manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitor for a semiconductor device and manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor for a semiconductor device and manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4248840