Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-09
2010-06-29
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S486000, C257SE29279, C257S057000, C257S213000, C257S347000
Reexamination Certificate
active
07745293
ABSTRACT:
It is an object of the present invention to manufacture a thin film transistor having a required property without complicating steps and devices. It is another object of the present invention to provide a technique for manufacturing a semiconductor device having high reliability and better electrical characteristics with a higher yield at lower cost. In the present invention, a lightly doped impurity region is formed in a source region side or a drain region side of a semiconductor layer covered with a gate electrode layer in a thin film transistor. The semiconductor layer is doped diagonally to the surface thereof using the gate electrode layer as a mask to form the lightly doped impurity region. Therefore, the properties of the thin film transistor can be minutely controlled.
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Office Action (Application No. 200510079030.7) Dated Mar. 20, 2009.
“Office Action (Application No. 200510079030.7) Dated Jul. 18, 2008”.
Office Action (Application No. 200510078541.7) dated Jun. 13, 2008.
Godo Hiromichi
Isobe Atsuo
Yamaguchi Tetsuji
Yamazaki Shunpei
Monbleau Davienne
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Roland Christopher M
Semiconductor Energy Laboratory Co. Ltd
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