Method of fabricating memory transistor

Details Method of fabricating memory transistor Method of fabricating memory transistor

2004-12-28

2010-06-29

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE29271

Reexamination Certificate

active

07745283

ABSTRACT:
A method of forming a memory transistor includes providing a substrate comprising semiconductive material and forming spaced-apart source/drain structures. At least one of the source/drain structures forms a Schottky contact to the semiconductive material. The method also includes forming a memory gate between the spaced-apart source/drain structures and forming a control gate disposed operatively over the memory gate.

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