SiC semiconductor device and method for manufacturing the same

Details SiC semiconductor device and method for manufacturing the same SiC semiconductor device and method for manufacturing the same

2008-02-26

2010-11-02

Wojciechowicz, Edward (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S585000, C438S779000, C438S796000

Reexamination Certificate

active

07824995

ABSTRACT:
A SiC semiconductor device includes: a SiC substrate having a main surface; a channel region on the substrate; first and second impurity regions on upstream and downstream sides of the channel region, respectively; a gate on the channel region through a gate insulating film. The channel region for flowing current between the first and second impurity regions is controlled by a voltage applied to the gate. An interface between the channel region and the gate insulating film has a hydrogen concentration equal to or greater than 2.6×1020cm−3. The interface provides a channel surface perpendicular to a (0001)-orientation plane.

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