Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-30
2010-11-02
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S257000, C438S259000, C438S265000, C257S315000, C257S316000, C257S324000, C257SE21170, C257SE21585, C257SE21680, C257SE27103, C365S185180
Reexamination Certificate
active
07824981
ABSTRACT:
A method comprises providing a first conductive region, arranging a second conductive region adjacent to and insulated from the first conductive region by a dielectric region, arranging a third region adjacent to and insulated from the second conductive region, and adjusting mechanical stress to at least one of the first conductive region and the second conductive region.
REFERENCES:
patent: 3943543 (1976-03-01), Caywood
patent: 3944849 (1976-03-01), Tasch, Jr. et al.
patent: 4072977 (1978-02-01), Bate et al.
patent: 4462090 (1984-07-01), Iizuka et al.
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4957877 (1990-09-01), Tam et al.
patent: 5029130 (1991-07-01), Yeh
patent: 5053839 (1991-10-01), Esquivel et al.
patent: 5070480 (1991-12-01), Caywood
patent: 5095344 (1992-03-01), Harari
patent: 5115289 (1992-05-01), Hisamoto et al.
patent: 5146426 (1992-09-01), Mukherjee et al.
patent: 5153880 (1992-10-01), Owen et al.
patent: 5161157 (1992-11-01), Owen et al.
patent: 5235544 (1993-08-01), Caywood
patent: 5268319 (1993-12-01), Harari
patent: 5270980 (1993-12-01), Pathak et al.
patent: 5280446 (1994-01-01), Ma et al.
patent: 5286994 (1994-02-01), Ozawa et al.
patent: 5426316 (1995-06-01), Mohammad
patent: 5429965 (1995-07-01), Shimoji
patent: 5432739 (1995-07-01), Pein
patent: 5517044 (1996-05-01), Koyama et al.
patent: 5523243 (1996-06-01), Mohammad
patent: 5557122 (1996-09-01), Shrivastava et al.
patent: 5559735 (1996-09-01), Ono et al.
patent: 5563083 (1996-10-01), Plain
patent: 5621738 (1997-04-01), Caywood et al.
patent: 5714766 (1998-02-01), Chen et al.
patent: 5739567 (1998-04-01), Wong
patent: 5764096 (1998-06-01), Lipp et al.
patent: 5768192 (1998-06-01), Eitan
patent: 5780341 (1998-07-01), Ogura
patent: 5790455 (1998-08-01), Caywood
patent: 5792670 (1998-08-01), Pio et al.
patent: 5822242 (1998-10-01), Chen
patent: 5838039 (1998-11-01), Sato
patent: 5847427 (1998-12-01), Hagiwara
patent: 5847996 (1998-12-01), Guterman et al.
patent: 5883409 (1999-03-01), Guterman et al.
patent: 5966329 (1999-10-01), Hsu et al.
patent: 5973356 (1999-10-01), Noble et al.
patent: 6002152 (1999-12-01), Guterman et al.
patent: 6080995 (2000-06-01), Nomoto
patent: 6088263 (2000-07-01), Liu et al.
patent: 6091104 (2000-07-01), Chen
patent: 6103573 (2000-08-01), Harari
patent: 6104057 (2000-08-01), Nakanishi et al.
patent: 6201732 (2001-03-01), Caywood
patent: 6211562 (2001-04-01), Forbes et al.
patent: 6303940 (2001-10-01), Kizilyalli et al.
patent: 6313487 (2001-11-01), Kencke et al.
patent: 6368915 (2002-04-01), Montree et al.
patent: 6372617 (2002-04-01), Kitamura
patent: 6384451 (2002-05-01), Caywood
patent: 6388922 (2002-05-01), Fujiwara et al.
patent: 6407424 (2002-06-01), Forbes
patent: 6411545 (2002-06-01), Caywood
patent: 6426896 (2002-07-01), Chen
patent: 6449189 (2002-09-01), Mihnea et al.
patent: 6451652 (2002-09-01), Caywood
patent: 6469343 (2002-10-01), Mura et al.
patent: 6479863 (2002-11-01), Caywood
patent: 6503785 (2003-01-01), Chen
patent: 6525371 (2003-02-01), Johnson
patent: 6525962 (2003-02-01), Pai et al.
patent: 6534816 (2003-03-01), Caywood
patent: 6555865 (2003-04-01), Lee
patent: 6574140 (2003-06-01), Caywood
patent: 6580124 (2003-06-01), Cleeves et al.
patent: 6580642 (2003-06-01), Wang
patent: 6593624 (2003-07-01), Walker
patent: 6621107 (2003-09-01), Blanchard et al.
patent: 6680505 (2004-01-01), Ohba et al.
patent: 6709928 (2004-03-01), Jenne et al.
patent: 6721205 (2004-04-01), Kobayashi et al.
patent: 6734105 (2004-05-01), Kim
patent: 6744111 (2004-06-01), Wu
patent: 6745370 (2004-06-01), Segal et al.
patent: 6747310 (2004-06-01), Fan
patent: 6753568 (2004-06-01), Nakazato et al.
patent: 6756633 (2004-06-01), Wang et al.
patent: 6791883 (2004-09-01), Swift et al.
patent: 6815764 (2004-11-01), Bae et al.
patent: 6847556 (2005-01-01), Cho
patent: 6853583 (2005-02-01), Diorio et al.
patent: 6894339 (2005-05-01), Fan et al.
patent: 6897514 (2005-05-01), Kouznetsov et al.
patent: 6936884 (2005-08-01), Chae et al.
patent: 6952032 (2005-10-01), Forbes et al.
patent: 6958513 (2005-10-01), Wang
patent: 7015102 (2006-03-01), Wang
patent: 7074672 (2006-07-01), Kianian et al.
patent: 7115942 (2006-10-01), Wang
patent: 7149118 (2006-12-01), Diorio et al.
patent: 7297634 (2007-11-01), Wang
patent: 2005/0167734 (2005-08-01), She et al.
patent: 2005/0247972 (2005-11-01), Forbes
patent: 2006/0284236 (2006-12-01), Bhattacharyya
patent: 2007/0008778 (2007-01-01), Wang
U.S. Appl. No. 10/105,741, filed Sep. 2003, Kianian, et al.
U.S. Appl. No. 10/192,291, filed Jul. 2003, Wang.
U.S. Appl. No. 09/925,134, filed Jan. 2004, Haran, et al.
U.S. Appl. No. 10/718,662, filed Jul. 2004, Kan et al.
U.S. Appl. No. 10/776,483, filed Aug. 2004, Kianian, et al.
U.S. Appl. No. 10/799,180, filed Sep. 2004, Yuan et al.
U.S. Appl. No. 10/797,296, filed Dec. 2004, Lee et al.
U.S. Appl. No. 10/183,834, filed Jul. 2003, Wang et al.
U.S. Appl. No. 09/942,338, filed Feb. 2004, Caywood.
U.S. Appl. No. 09/955,285, filed Dec. 2002, Kim.
U.S. Appl. No. 09/881,332, filed Dec. 2002, Jones et al.
U.S. Appl. No. 10/330,851, filed Jul. 2003, Lee et al.
U.S. Appl. No. 10/348,267, filed Jul. 2003, Jones et al.
U.S. Appl. No. 10/040,724, filed May 2003, Wang et al.
U.S. Appl. No. 10/409,407, filed Oct. 2004, Chen et al.
U.S. Appl. No. 10/849,975, filed Oct. 2004, Wang et al.
U.S. Appl. No. 10/791,486, filed Aug. 2004, Harari.
U.S. Appl. No. 10/393,896, filed Sep. 2004, Chen et al.
U.S. Appl. No. 10/848,982, filed Oct. 2004, Wang.
U.S. Appl. No. 10/850,031, filed Oct. 2004, Wang et al.
U.S. Appl. No. 09/916,555, filed Mar. 2002, Wang et al.
U.S. Appl. No. 09/866,938, filed Oct. 2001, Noble et al.
U.S. Appl. No. 10/066,376, filed Oct. 2002, Kouznetsov et al.
U.S. Appl. No. 10/205,289, filed Mar. 2003, Wang.
U.S. Appl. No. 09/860,704, filed Nov. 2003, Harari et al.
Caywood, John M. et al; “A Novel Nonvolatile Memory Cell Suitable for Both Flash and Byte-Writable Applications”; IEEE Transactions on Electron Devices, vol. 49, No. 5, May 2002; pp. 802-807.
SMA111—Compound Semiconductors; Lecture 2—Metal-Semiconductor Junctions—Outline; C. G. Fonstad; Feb. 2003; 22 pages.
H. Fujiwara et al; “High-Efficiency Programming with Inter-Gate Hot-Electron Injection for Flash . . . ,” Digest of Non-Volatile Semiconductor Memory Workshop, Feb. 2000; p. 127.
S. Sze; “Physics of Semiconductor Devices,” Wiley-Interscience, 1981, “Schotky Effect”, pp. 250-253.
Lenzlinger and Snow; “Fowler-Nordheim Tunneling into Thermally Grown SiO2,” J. Appl. Phys., vol. 40, No. 1, Jan. 1969; pp. 278-283.
Nicollian and Brews; “MOS Physics and Technology,” Wiley-Interscience, 1982, “Photo I-V method—Basics”, pp. 512-515.
Heiblum, M. et al; “Direct Observation of ballistic Transport in GaAs,” pp. 2200-2203, vol. 55, Physical Review Letters; 1985.
Pein, H. et al; “Performance of the 3-D Sidewall Flash EPROM Cell”, IEDM Technical Digest, pp. 11-14, 1993.
C.A. Mead, “The Tunnel-Emission Amplifier”, Proceedings of the IRE, pp. 359-361, 1960.
Fischetti et al., “Six-bank k.p. calculation of hole mobility in silicon inversion layers: dependence on surface . . . ” Journal of Appl. Physics, vol. 94, pp. 1079-1095, 2003.
Hensel et al., Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation . . . , Phys. Rev. 129, pp. 1141-1162, 1963.
Vogelsang et al., “Electron Mobilities and high-Field Drift Velocity in Strained Si9licon on Silicon-Germanium Substrate”, IEEE Trans. on Electron Devices, pp. 2641-2642, 1992.
Hinckley et al., “Hole Transport Theory in Pseudomorphic Si1-xGex Alloys Grown on Si(001) Substrates”, Phys. Rev. B, 41, pp. 2912-2926. 1990.
Bock et al., “3.3ps SiGe Bipolar Technology”, Proceeding of the IEDM, pp. 255-258, 2004.
Kitamura et al; “A Low Voltage Operating Flash Cell with High Coupling Ratio Using Horned Floating Gate with Fine HSG”; Jun. 1998 S
LandOfFree
Method and apparatus for semiconductor device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for semiconductor device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for semiconductor device and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4236786