Semiconductor apparatus

Details Semiconductor apparatus Semiconductor apparatus

2009-03-12

2010-12-07

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S395000, C438S303000, C438S304000

Reexamination Certificate

active

07847348

ABSTRACT:
Provided is a semiconductor apparatus including a substrate region, an active region on the substrate region, a gate pattern on the active region, and first and second impurities-doped regions along both edges of the active region that do not overlap the gate pattern. The length of the first and second impurities-doped regions in the horizontal direction may be shorter than in the vertical direction. The first and second impurities-doped regions may be formed to be narrow along both edges of the active region so as not to overlap the gate pattern.

REFERENCES:
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patent: 7122850 (2006-10-01), Nam et al.
patent: 2003/0038308 (2003-02-01), Kim
patent: 2004/0038485 (2004-02-01), Pong et al.
patent: 04-116846 (1992-04-01), None
patent: 05-121436 (1993-05-01), None
patent: 10-2006-0069588 (2006-06-01), None

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