Resist pattern thickening material and process for forming...

Details Resist pattern thickening material and process for forming... Resist pattern thickening material and process for forming...

2005-01-31

2010-10-26

Kelly, Cynthia H (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S311000, C430S331000

Reexamination Certificate

active

07820367

ABSTRACT:
The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern.

REFERENCES:
patent: 4770989 (1988-09-01), Komamura et al.
patent: 6153349 (2000-11-01), Ichikawa et al.
patent: 6180320 (2001-01-01), Saito et al.
patent: 6187084 (2001-02-01), Bradbury et al.
patent: 6555607 (2003-04-01), Kanda et al.
patent: 6579657 (2003-06-01), Ishibashi et al.
patent: 6949325 (2005-09-01), Li et al.
patent: 7008748 (2006-03-01), Hasberg et al.
patent: 7399582 (2008-07-01), Takahashi et al.
patent: 2001/0031436 (2001-10-01), Lelental et al.
patent: 2003/0087192 (2003-05-01), Gau et al.
patent: 2003/0157801 (2003-08-01), Kozawa et al.
patent: 2004/0012663 (2004-01-01), Takashima et al.
patent: 2004/0121259 (2004-06-01), Kozawa et al.
patent: 2004/0137377 (2004-07-01), Shinbori et al.
patent: 2004/0241569 (2004-12-01), Chen et al.
patent: 2006/0160015 (2006-07-01), Takano et al.
patent: 2008/0044759 (2008-02-01), Ishibashi et al.
patent: 1429185 (2004-06-01), None
patent: 5-197151 (1993-08-01), None
patent: 10-73927 (1998-03-01), None
patent: 11-204399 (1999-07-01), None
patent: 2000-35672 (2000-02-01), None
patent: 2000-267268 (2000-09-01), None
patent: 2000-347414 (2000-12-01), None
patent: 2001-19860 (2001-01-01), None
patent: 2001-33984 (2001-02-01), None
patent: 2001-228616 (2001-08-01), None
patent: 2001-281886 (2001-10-01), None
patent: 2002-6491 (2002-01-01), None
patent: 2002-6512 (2002-01-01), None
patent: 2002-49161 (2002-02-01), None
patent: 2003-84457 (2003-03-01), None
patent: 2003-131400 (2003-05-01), None
patent: 2004-077951 (2004-03-01), None
patent: 200664851 (2006-03-01), None
patent: WO 03/040831 (2003-05-01), None
patent: WO 2004/074941 (2004-09-01), None
patent: 2005008340 (2005-01-01), None
Korean Office Action dated Jun. 15, 2006, issued in corresponding KR Application No. 10-2005-0008440.
Korean Office Action dated Sep. 13, 2007.
Japanese Office Action dated Dec. 22, 2009 (mailing date), issued in corresponding Japanese Patent Application No. 2004-291910.

Affiliated with

Also associated with

Rating

Resist pattern thickening material and process for forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resist pattern thickening material and process for forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resist pattern thickening material and process for forming... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4232082