Method for fabricating an ultra thin silicon on insulator

Details Method for fabricating an ultra thin silicon on insulator Method for fabricating an ultra thin silicon on insulator

2008-03-05

2010-10-19

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C483S064000, C483S064000, C483S064000, C483S064000

Reexamination Certificate

active

07816224

ABSTRACT:
In one embodiment, the invention is a method for fabricating an ultra thin silicon on insulator. One embodiment of a method for fabricating an ultra thin silicon on insulator includes providing a silicon layer, saturating the silicon layer with at least one reactant gas at a first temperature, the first temperature being low enough to substantially prevent the occurrence of any reactions involving the reactant gas, and raising the first temperature to a second temperature, the second temperature being approximately a dissociation temperature of the reactant gas.

REFERENCES:
patent: 7468311 (2008-12-01), Dip et al.
patent: 2005/0218395 (2005-10-01), Kim et al.

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