Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-12-31
2010-10-19
Sefer, A. (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S258000, C438S297000, C438S593000, C257SE21625, C257SE21628, C257SE21679
Reexamination Certificate
active
07816206
ABSTRACT:
The semiconductor device comprises a silicon substrate14having a step formed in the surface which makes the surface in a flash memory cell region10lower than the surface in a peripheral circuit region12; a device isolation region20aformed in a trench18in the flash memory cell region10; a device isolation region20cformed in a trench24deeper than the trench18in the peripheral circuit region12; a flash memory cell46including a floating gate32and a control gate40formed on the device region defined by the device isolation region20a; and transistors62, 66formed on the device regions defined by the device isolation region20c.
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Office Action issued by Chinese Patent Office on Jul. 18, 2008 in Chinese Appln. No. 200510125091.2.
Japanese Office Action dated May 11, 2010, issued in corresponding Japanese Patent Application No. 2005-222119.
Fujitsu Semiconductor Limited
Sefer A.
Westerman Hattori Daniels & Adrian LLP
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